Researchers Develop 128Mb STT-MRAM With World’s Fastest Write Speed For Embedded Memory

December 28, 2018 Syndicated 0

A research team has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications, such as cache in IOT and AI. This is currently the world’s fastest write speed for embedded memory application with a density over 100Mb and will pave the way for the mass-production of large capacity STT-MRAM.

Guccifer 2.0 Game Over – Year End Review

December 25, 2018 Syndicated 0

A comprehensive review that chronicles the past two years of extensive research and investigation into the Guccifer 2.0 case, evaluating all of the discoveries made during the last two years, as well as the various challenges received, and to provide an up-to-date status on the validity of different areas of research into Guccifer 2.0.